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algaas infrared emitting diode SE1470 description features compact metal can coaxial package 24? (nominal) beam angle 880 nm wavelength higher output power than gaas at equivalent drive currents wide operating temperature range (-55?c?to?+125?c) mechanically and spectrally matched to sd1420 photodiode, sd1440 phototransistor and sd1410 photodarlington the SE1470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a glass lensed metal can coaxial package. the package may have a tab or second lead welded to the can as an optional feature (SE1470-xxxl). both leads are flexible and may be formed as required to fit various mounting configurations. these devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current. infra-63.tif outline dimensions in inches (mm) 3 plc decimals 0.005(0.12) tolerance 2 plc decimals 0.020(0.51) .106(2.69) dia .076(1.93) anode min .095(2.41) dia .020(0.51) dia .091(2.26) .079(2.01) .062(1.57) dia 1.000(25.40) .122(3.10) .010(0.25) cathode (case) dim_001a.ds4 SE1470-xxx .106(2.69) dia .076(1.93) anode cathode typical min .095(2.41) dia .020 (0.51) dia .091(2.26) .079(2.01) .062(1.57) dia 1.000(25.40) .122(3.10) .010(0.25) .020 (0.51) dia ~ ~ ~ ~ ~ ~ dim_001b.ds4 SE1470-xxxl honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 12
algaas infrared emitting diode SE1470 electrical characteristics units test conditions min parameter symbol typ max absolute maximum ratings (25?c free-air temperature unless otherwise noted) continuous forward current 50 ma power dissipation 75 mw [] operating temperature range -55?c to 125?c storage temperature range -65?c to 150?c soldering temperature (10 sec) 260?c notes 1. derate linearly from 25?c free-air temperature at the rate of 0.71?mw/?c. schematic
algaas infrared emitting diode SE1470 radiant intensity vs angular displacement gra_007.ds4 angular displacement - degrees r e l a t i v e i n t e n s i t y 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -40 -30 -20 -10 0 +10 +20 +30 +40 fig. 1 radiant intensity vs forward current gra_008.ds4 forward current - ma n o r m a l i z e d r a d i a n t i n t e n s i t y 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 4.0 8.0 16.0 12.0 20.0 fig. 2 forward voltage vs forward current gra_201.ds4 forward current - ma f o r w a r d v o l t a g e - v 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0 10 20 30 40 50 fig. 3 forward voltage vs temperature gra_202.ds4 temperature - c f o r w a r d v o l t a g e - v 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 i f = 20 ma fig. 4 spectral bandwidth gra_011.ds4 wavelength - nm r e l a t i v e i n t e n s i t y 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 760 800 840 880 920 960 1000 fig. 5 coupling characteristics with sd1440 gra_012.ds4 lens-to-lens seperation - inches n o r m a l i z e d l i g h t c u r r e n t 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.2 0.4 0.8 0.6 1.4 1.2 1.0 fig. 6 honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 14
algaas infrared emitting diode SE1470 relative power output vs free air temperature gra_130.ds4 t a - free-air temperature - (c) r e l a t i v e p o w e r o u t p u t 0.1 1.0 10 -50 -25 0 +25 +50 +75 +100 0.2 0.5 2.0 5.0 i f = 30 ma i f = 20 ma i f = 10 ma i f = 40 ma fig. 7 all performance curves show typical values honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 15

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